? 2012 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c, r gs = 1m 250 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 110 a i l(rms) external lead current limit 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i a t c = 25 c 25 a e as t c = 25 c 1 j p d t c = 25 c 694 w dv/dt i s i dm , v dd v dss , t j 150c 10 v/ns t j -55 to +150 c t jm +150 c t stg -55 to +150 c t l 1.6mm (0.063in) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. f c mounting force (plus220smd) 11..65/2.5..14.6 n/lb. weight to-247 6 g plus220smd 4 g trench tm power mosfets IXTH110N25T ixtv110n25ts ds99904b(05/12) v dss = 250v i d25 = 110a r ds(on) 24m n-channel enhancement mode avalanche rated fast intrinsic rectifier features z international standard packages z avalanche rated z high current handling capability z fast intrinsic rectifier z low r ds(on) advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 1ma 3.0 5.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 5 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 24 m g = gate d = drain s = source tab = drain to-247 (ixth) g s d plus220smd(ixtv_s) d (tab) d (tab) g s
ixys reserves the right to change limits, test conditions, and dimensions. IXTH110N25T ixtv110n25ts symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 65 110 s c iss 9400 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 850 pf c rss 55 pf t d(on) 19 ns t r 27 ns t d(off) 60 ns t f 27 ns q g(on) 157 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 40 nc q gd 50 nc r thjc 0.18 c/w r thcs 0.25 c/w notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. on through-hole package, r ds(on) kelvin test contact location must be 5mm or less from the package body. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external) source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 110 a i sm repetitive, pulse width limited by t jm 350 a v sd i f = 55a, v gs = 0v, note 1 1.2 v t rr 170 ns i rm 27 a q rm 2.3 c i f = 55a, -di/dt = 250a/ s, v r = 100v, v gs = 0v plus220smd outline to-247 outline terminals: 1 - gate 2 - drain 3 - source e ? p 1 2 3 dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2,4 - drain 3 - source
? 2012 ixys corporation, all rights reserved fig. 1. output characteristics @ t j = 25oc 0 20 40 60 80 100 0 0.4 0.8 1.2 1.6 2 2.4 2.8 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 5.5v 6v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ t j = 125oc 0 20 40 60 80 100 0123456 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 55a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 110a i d = 55a fig. 5. r ds(on) normalized to i d = 55a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 50 100 150 200 250 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit IXTH110N25T ixtv110n25ts
ixys reserves the right to change limits, test conditions, and dimensions. IXTH110N25T ixtv110n25ts fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 125v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2012 ixys corporation, all rights reserved fig. 14. resistive turn-on rise time vs. drain current 18 20 22 24 26 28 30 32 20 30 40 50 60 70 80 90 100 110 120 i d - amperes t r - nanoseconds r g = 2 ? , v gs = 15v v ds = 125v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 25 30 35 40 45 50 2345678910 r g - ohms t r - nanoseconds 19 21 23 25 27 29 31 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 110a, 55a fig. 16. resistive turn-off switching times vs. junction temperature 14 18 22 26 30 34 38 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 54 58 62 66 70 74 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2 ? , v gs = 15v v ds = 125v i d = 55a i d = 110a fig. 17. resistive turn-off switching times vs. drain current 20 22 24 26 28 30 32 20 30 40 50 60 70 80 90 100 110 120 i d - amperes t f - nanoseconds 40 50 60 70 80 90 100 t d ( o f f ) - nanoseconds t f t d(off ) - - - - r g = 2 ? , v gs = 15v v ds = 125v t j = 25oc t j = 125oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 22 24 26 28 30 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 ? , v gs = 15v v ds = 125v i d = 110a i d = 55a fig. 18. resistive turn-off switching times vs. gate resistance 10 30 50 70 90 110 2345678910 r g - ohms t f - nanoseconds 40 80 120 160 200 240 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 55a, 110a ixys ref: t_110n25t(8w)5-14-12-b IXTH110N25T ixtv110n25ts
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